Технічний опис IPP039N10N5XKSA1 Infineon Technologies
Description: MV POWER MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 125µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V.
Інші пропозиції IPP039N10N5XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPP039N10N5XKSA1 | Виробник : Infineon Technologies |
Description: MV POWER MOS Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 125µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
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