Технічний опис IPP05CN10NGXKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 300W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 5.4mΩ, Mounting: THT, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції IPP05CN10NGXKSA1
| Фото | Назва | Виробник | Інформація |
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| IPP05CN10NGXKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPP05CN10NGXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO220-3 |
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| IPP05CN10NGXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Kind of channel: enhanced |
товар відсутній |