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IXFA14N60P-TRL

IXFA14N60P-TRL IXYS


Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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Технічний опис IXFA14N60P-TRL IXYS

Description: MOSFET N-CH 600V 14A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.

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IXFA14N60P-TRL IXFA14N60P-TRL Виробник : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IX-1621813.pdf MOSFET IXFA14N60P TRL
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