IXFA20N50P3 IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 204.92 грн |
3+ | 170.91 грн |
10+ | 159.15 грн |
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Технічний опис IXFA20N50P3 IXYS
Description: MOSFET N-CH 500V 20A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції IXFA20N50P3 за ціною від 186.82 грн до 245.9 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IXFA20N50P3 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 7-14 дні (днів) |
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IXFA20N50P3 | Виробник : IXYS |
Description: MOSFET N-CH 500V 20A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IXFA20N50P3 | Виробник : IXYS | MOSFET Polar3 HiPerFET Power MOSFET |
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