IXFA50N20X3 IXYS
Виробник: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXFA50N20X3 IXYS
Description: MOSFET N-CH 200V 50A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Інші пропозиції IXFA50N20X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFA50N20X3 | Виробник : IXYS |
Description: MOSFET N-CH 200V 50A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
товар відсутній |
|
 |
IXFA50N20X3 | Виробник : IXYS |
MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
товар відсутній |
|
| IXFA50N20X3 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 70A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
товар відсутній |