IXFH16N50P3 IXYS
Виробник: IXYSDescription: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.76 грн |
| 30+ | 320.23 грн |
| 120+ | 286.54 грн |
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Технічний опис IXFH16N50P3 IXYS
Description: MOSFET N-CH 500V 16A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V.
Інші пропозиції IXFH16N50P3
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Ціна без ПДВ |
|---|---|---|---|---|---|
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Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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