Технічний опис LGB18N40ATH Littelfuse Inc.
Category: SMD IGBT transistors, Description: Transistor: IGBT; 400V; 18A; 115W; D2PAK, Type of transistor: IGBT, Collector-emitter voltage: 400V, Collector current: 18A, Power dissipation: 115W, Case: D2PAK, Gate-emitter voltage: ±18V, Pulsed collector current: 50A, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Application: automotive industry; ignition systems.
Інші пропозиції LGB18N40ATH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGB18N40ATH | Виробник : Littelfuse | Littelfuse D2PAK, IGBT3 |
товар відсутній |
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| LGB18N40ATH | Виробник : LITTELFUSE |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 18A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 18A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±18V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: automotive industry; ignition systems |
товар відсутній |