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LGB8207ATH LITTELFUSE

Виробник: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 165W
кількість в упаковці: 1 шт

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Технічний опис LGB8207ATH LITTELFUSE

Category: SMD IGBT transistors, Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK, Mounting: SMD, Application: automotive industry; ignition systems, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Case: D2PAK, Collector-emitter voltage: 365V, Gate-emitter voltage: ±15V, Collector current: 20A, Pulsed collector current: 50A, Type of transistor: IGBT, Power dissipation: 165W, кількість в упаковці: 1 шт.

Інші пропозиції LGB8207ATH

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	LGB8207ATH	Виробник : LITTELFUSE	Category: SMD IGBT transistors Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK Mounting: SMD Application: automotive industry; ignition systems Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Case: D2PAK Collector-emitter voltage: 365V Gate-emitter voltage: ±15V Collector current: 20A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 165W	товар відсутній