LGE3D20120A LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
кількість в упаковці: 1 шт
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Технічний опис LGE3D20120A LUGUANG ELECTRONIC
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 20A, Semiconductor structure: single diode, Case: TO220-2, Kind of package: tube, Max. forward impulse current: 160A, Max. forward voltage: 2.2V, Leakage current: 50µA, кількість в упаковці: 1 шт.
Інші пропозиції LGE3D20120A
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LGE3D20120A | Виробник : LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2.2V Leakage current: 50µA |
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