LGE3D20120D LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2V
Leakage current: 30µA
кількість в упаковці: 1 шт
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Технічний опис LGE3D20120D LUGUANG ELECTRONIC
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Kind of package: tube, Max. forward impulse current: 160A, Max. forward voltage: 2V, Leakage current: 30µA, кількість в упаковці: 1 шт.
Інші пропозиції LGE3D20120D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3D20120D | Виробник : LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2V Leakage current: 30µA |
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