LGE3M160120E LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис LGE3M160120E LUGUANG ELECTRONIC
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 11A, Pulsed drain current: 38A, Power dissipation: 127W, Case: D2PAK, Gate-source voltage: -5...20V, On-state resistance: 0.285Ω, Mounting: SMD, Gate charge: 42nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M160120E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3M160120E | Виробник : LUGUANG ELECTRONIC |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 11A Pulsed drain current: 38A Power dissipation: 127W Case: D2PAK Gate-source voltage: -5...20V On-state resistance: 0.285Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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