LGE3M18120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W, Case: TO247-4, Mounting: THT, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 235nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 220A, Drain-source voltage: 1.2kV, Drain current: 74A, On-state resistance: 34mΩ, Type of transistor: N-MOSFET, Power dissipation: 428W, Polarisation: unipolar, кількість в упаковці: 1 шт.