LGE3M1K170B LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис LGE3M1K170B LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 3.5A, Pulsed drain current: 6A, Power dissipation: 69W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 1.5Ω, Mounting: THT, Gate charge: 21.8nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M1K170B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3M1K170B | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhanced |
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