LGE3M45170Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
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Технічний опис LGE3M45170Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W, Case: TO247-4, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Gate charge: 54nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 160A, Drain-source voltage: 1.7kV, Drain current: 48A, On-state resistance: 90mΩ, Type of transistor: N-MOSFET, Power dissipation: 520W, Polarisation: unipolar, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M45170Q
Фото | Назва | Виробник | Інформація |
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LGE3M45170Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube |
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