LSIC1MO170E0750 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: SICFET N-CH 1700V 750OHM TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 750OHM TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
на замовлення 4617 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 370.77 грн |
30+ | 285.1 грн |
120+ | 264.18 грн |
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Технічний опис LSIC1MO170E0750 Littelfuse Inc.
Description: SICFET N-CH 1700V 750OHM TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V.
Інші пропозиції LSIC1MO170E0750 за ціною від 278.32 грн до 575.8 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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LSIC1MO170E0750 | Виробник : Littelfuse | MOSFET SIC MOSFET 1700V 750MO |
на замовлення 2221 шт: термін постачання 21-30 дні (днів) |
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LSIC1MO170E0750 | Виробник : Littelfuse | 1700 V 750 mOhm N-Channel SiC MOSFET |
товар відсутній |
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LSIC1MO170E0750 | Виробник : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.4A; Idm: 11A; 60W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 60W Polarisation: unipolar Gate charge: 13nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 11A Drain-source voltage: 1.7kV Drain current: 4.4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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LSIC1MO170E0750 | Виробник : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.4A; Idm: 11A; 60W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 60W Polarisation: unipolar Gate charge: 13nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 11A Drain-source voltage: 1.7kV Drain current: 4.4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET |
товар відсутній |