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LSIC2SD120C10

LSIC2SD120C10 Littelfuse

littelfuse_power_semiconductor_silicon_carbide_LSI-1109675.pdf Виробник: Littelfuse
Schottky Diodes & Rectifiers 1200V 10A 2-lead GEN2 SiC
на замовлення 2211 шт:
термін постачання 21-30 дні (днів)
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Технічний опис LSIC2SD120C10 Littelfuse

Description: DIODE SIL CARB 1.2KV 33A TO252L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 582pF @ 1V, 1MHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-252-2L (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.

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LSIC2SD120C10 LSIC2SD120C10 Виробник : Littelfuse 48703106630313444870307306679546littelfuse_power_semiductor_sili_carbide_lsic2sd120c10_datasheet.pdf.pdf.pdf Rectifier Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) DPAK T/R
товар відсутній
LSIC2SD120C10 LSIC2SD120C10 Виробник : Littelfuse Inc. littelfuse_power_semiconductor_silicon_carbide_lsic2sd120c10_datasheet.pdf.pdf Description: DIODE SIL CARB 1.2KV 33A TO252L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 582pF @ 1V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
LSIC2SD120C10 LSIC2SD120C10 Виробник : Littelfuse Inc. littelfuse_power_semiconductor_silicon_carbide_lsic2sd120c10_datasheet.pdf.pdf Description: DIODE SIL CARB 1.2KV 33A TO252L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 582pF @ 1V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній