LSIC2SD120D20A LITTELFUSE
Виробник: LITTELFUSE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263; 108W
Application: automotive industry
Manufacturer series: LSIC2SD
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 145A
Power dissipation: 108W
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263; 108W
Application: automotive industry
Manufacturer series: LSIC2SD
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 145A
Power dissipation: 108W
Type of diode: Schottky rectifying
Case: TO263
Technology: SiC
Mounting: SMD
кількість в упаковці: 1 шт
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Технічний опис LSIC2SD120D20A LITTELFUSE
Description: SIC SCHOTTKY DIODE 1200V 20A TO2, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1310pF @ 1V, 1MHz, Current - Average Rectified (Io): 55A, Supplier Device Package: TO-263-2L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Qualification: AEC-Q101.
Інші пропозиції LSIC2SD120D20A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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LSIC2SD120D20A | Виробник : Littelfuse Inc. |
Description: SIC SCHOTTKY DIODE 1200V 20A TO2 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1310pF @ 1V, 1MHz Current - Average Rectified (Io): 55A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
товар відсутній |
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LSIC2SD120D20A | Виробник : Littelfuse Inc. |
Description: SIC SCHOTTKY DIODE 1200V 20A TO2 Packaging: Cut Tape (CT) Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1310pF @ 1V, 1MHz Current - Average Rectified (Io): 55A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
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LSIC2SD120D20A | Виробник : Littelfuse | Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 20A TO263-2L |
товар відсутній |
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LSIC2SD120D20A | Виробник : LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263; 108W Application: automotive industry Manufacturer series: LSIC2SD Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 145A Power dissipation: 108W Type of diode: Schottky rectifying Case: TO263 Technology: SiC Mounting: SMD |
товар відсутній |