MCQ12N10Y-TP

MCQ12N10Y-TP Micro Commercial Co


MCQ12N10Y(SOP-8).pdf Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
на замовлення 2970 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.14 грн
10+ 55.77 грн
100+ 43.36 грн
500+ 34.5 грн
1000+ 28.1 грн
2000+ 26.45 грн
Мінімальне замовлення: 5
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Технічний опис MCQ12N10Y-TP Micro Commercial Co

Description: N-CHANNEL MOSFET,SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A, Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V.

Інші пропозиції MCQ12N10Y-TP

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Ціна без ПДВ
MCQ12N10Y-TP Виробник : Micro Commercial Components mcq12n10ysop-8.pdf N-CHANNEL MOSFET
товар відсутній
MCQ12N10Y-TP MCQ12N10Y-TP Виробник : Micro Commercial Co MCQ12N10Y(SOP-8).pdf Description: N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
товар відсутній