MD300HFR120B3S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
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Технічний опис MD300HFR120B3S STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC, Semiconductor structure: transistor/transistor, Case: B3.7, On-state resistance: 7.5mΩ, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Drain current: 300A, Drain-source voltage: 1.2kV, Technology: SiC, Gate-source voltage: ±20V, Topology: MOSFET half-bridge, Pulsed drain current: 1.096kA, кількість в упаковці: 12 шт.
Інші пропозиції MD300HFR120B3S
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MD300HFR120B3S | Виробник : STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 On-state resistance: 7.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 300A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA |
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