MD30FSR120L2SF STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
кількість в упаковці: 12 шт
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Технічний опис MD30FSR120L2SF STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 30A, Case: L2, Topology: MOSFET three-phase bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 60mΩ, Pulsed drain current: 154A, Power dissipation: 203W, Technology: SiC, Gate-source voltage: -4...22V, Mechanical mounting: screw, кількість в упаковці: 12 шт.
Інші пропозиції MD30FSR120L2SF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MD30FSR120L2SF | Виробник : STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: L2 Topology: MOSFET three-phase bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 60mΩ Pulsed drain current: 154A Power dissipation: 203W Technology: SiC Gate-source voltage: -4...22V Mechanical mounting: screw |
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