Технічний опис MIW50N65F-BP Micro Commercial Components
Description: IGBT 650V 40A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Supplier Device Package: TO-247AB, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 55ns/319ns, Switching Energy: 1.27mJ (on), 650µJ (off), Test Condition: 300V, 50A, 10Ohm, 15V, Gate Charge: 450 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 326 W.
Інші пропозиції MIW50N65F-BP
| Фото | Назва | Виробник | Інформація |
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MIW50N65F-BP | Виробник : Micro Commercial Co |
 Description: IGBT 650V 40A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Supplier Device Package: TO-247AB IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 55ns/319ns Switching Energy: 1.27mJ (on), 650µJ (off) Test Condition: 300V, 50A, 10Ohm, 15V Gate Charge: 450 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 326 W |
товар відсутній |
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MIW50N65F-BP | Виробник : Micro Commercial Components (MCC) |
IGBT Transistors |
товар відсутній |