Технічний опис MIXA81H1200EH IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W, Application: motors; photovoltaics, Topology: H-bridge, Power dissipation: 390W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Pulsed collector current: 225A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: transistor/transistor, Case: E3-Pack, Gate-emitter voltage: ±20V, Collector current: 84A, кількість в упаковці: 1 шт.
Інші пропозиції MIXA81H1200EH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MIXA81H1200EH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Application: motors; photovoltaics Topology: H-bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A кількість в упаковці: 1 шт |
товар відсутній |
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MIXA81H1200EH | Виробник : IXYS | Description: IGBT MODULE 1200V 84A |
товар відсутній |
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MIXA81H1200EH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Application: motors; photovoltaics Topology: H-bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A |
товар відсутній |