MJE271G onsemi
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
на замовлення 9677 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
701+ | 28.53 грн |
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Технічний опис MJE271G onsemi
Description: TRANS PNP DARL 100V 2A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V, Frequency - Transition: 6MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W.
Інші пропозиції MJE271G за ціною від 41.58 грн до 41.58 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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MJE271G | Виробник : ONSEMI |
Description: ONSEMI - MJE271G - MJE271G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 9677 шт: термін постачання 21-31 дні (днів) |
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MJE271G | Виробник : ON Semiconductor |
на замовлення 7478 шт: термін постачання 14-28 дні (днів) |
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MJE271G | Виробник : ON Semiconductor | Trans Darlington PNP 100V 2A 1500mW 3-Pin(3+Tab) TO-225 Box |
товар відсутній |
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MJE271G | Виробник : onsemi |
Description: TRANS PNP DARL 100V 2A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V Frequency - Transition: 6MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
товар відсутній |
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MJE271G | Виробник : onsemi | Darlington Transistors 2A 100V Bipolar Power PNP |
товар відсутній |