MSC040SMA120S Microchip Technology
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1710.15 грн |
25+ | 1519.41 грн |
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Технічний опис MSC040SMA120S Microchip Technology
Description: SICFET N-CH 1200V 64A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 303W, Vgs(th) (Max) @ Id: 2.6V @ 2mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Інші пропозиції MSC040SMA120S за ціною від 1209.61 грн до 1812.65 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MSC040SMA120S | Виробник : Microchip Technology | MOSFET MOSFET SIC 1200 V 40 mOhm TO-268 |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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MSC040SMA120S | Виробник : Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 61A Automotive 3-Pin(2+Tab) D3PAK |
товар відсутній |
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MSC040SMA120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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MSC040SMA120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |