Технічний опис MSRT15060(A)D GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції MSRT15060(A)D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MSRT15060AD | Виробник : GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 150A 3 TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
|
d_SPL.jpg "MSRT15060(A)D") |
MSRT15060(A)D | Виробник : GeneSiC Semiconductor |
 Discrete Semiconductor Modules 600V 150A Forward |
товар відсутній |