Технічний опис MWI75-06A7T IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Technology: NPT, Collector current: 60A, Power dissipation: 280W, Case: E2-Pack, Gate-emitter voltage: ±20V, Pulsed collector current: 120A, Semiconductor structure: transistor/transistor, Max. off-state voltage: 0.6kV, Application: motors, Electrical mounting: Press-in PCB, Topology: IGBT three-phase bridge; NTC thermistor, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції MWI75-06A7T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MWI75-06A7T | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| MWI75-06A7T | Виробник : IXYS |
Description: MOD IGBT SIXPACK RBSOA 600V E2 |
товар відсутній |
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| MWI75-06A7T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
товар відсутній |