Технічний опис ND104N18KHPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 104A PB20-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 104A, Supplier Device Package: BG-PB20-1, Operating Temperature - Junction: -40°C ~ 135°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Current - Reverse Leakage @ Vr: 20 mA @ 1800 V.
Інші пропозиції ND104N18KHPSA1
| Фото | Назва | Виробник | Інформація |
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| ND104N18KHPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 1.8KV 104A PB20-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 104A Supplier Device Package: BG-PB20-1 Operating Temperature - Junction: -40°C ~ 135°C Voltage - DC Reverse (Vr) (Max): 1800 V Current - Reverse Leakage @ Vr: 20 mA @ 1800 V |
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ND104N18KHPSA1 | Виробник : Infineon Technologies |
Discrete Semiconductor Modules THYR / DIODE MODULE DK |
товар відсутній |