Технічний опис NGTB15N60R2FG ON Semiconductor
Description: IGBT 600V 24A TO220F-3FS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-220F-3FS, Td (on/off) @ 25°C: 70ns/190ns, Switching Energy: 550µJ (on), 220µJ (off), Test Condition: 300V, 15A, 30Ohm, 15V, Gate Charge: 80 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 54 W.
Інші пропозиції NGTB15N60R2FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NGTB15N60R2FG | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube |
товар відсутній |
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NGTB15N60R2FG | Виробник : onsemi |
Description: IGBT 600V 24A TO220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-220F-3FS Td (on/off) @ 25°C: 70ns/190ns Switching Energy: 550µJ (on), 220µJ (off) Test Condition: 300V, 15A, 30Ohm, 15V Gate Charge: 80 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 54 W |
товар відсутній |