NGTB50N65S1WG ON Semiconductor

Description: IGBT TRENCH 650V 140A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 75ns/128ns, Switching Energy: 1.25mJ (on), 530µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 128 nC, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 300 W.