Технічний опис NHPJ08S600G ON Semiconductor
Description: DIODE GP 600V 8A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Інші пропозиції NHPJ08S600G
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NHPJ08S600G | Виробник : onsemi |
 Description: DIODE GP 600V 8A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
товар відсутній |
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NHPJ08S600G | Виробник : ON Semiconductor |
Rectifiers PLANAR ULTRAFAST 600V 8A |
товар відсутній |