NP33N06YDG-E1-AY Renesas Electronics America Inc

Description: MOSFET N-CH 60V 33A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V, Power Dissipation (Max): 1W (Ta), 97W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.