NP80N04NDG-S18-AY Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 151+ | 134.55 грн |
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Технічний опис NP80N04NDG-S18-AY Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V, Power Dissipation (Max): 1.8W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-262, Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NP80N04NDG-S18-AY за ціною від 134.55 грн до 134.55 грн
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NP80N04NDG-S18-AY | Виробник : NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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