NTD4815NH-1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
на замовлення 64240 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3206+ | 6.47 грн |
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Технічний опис NTD4815NH-1G onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: I-PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V.
Інші пропозиції NTD4815NH-1G за ціною від 14.31 грн до 17.36 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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NTD4815NH-1G | Виробник : ONSEMI |
Description: ONSEMI - NTD4815NH-1G - MOSFET, N, 30V, IPAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
на замовлення 64240 шт: термін постачання 21-31 дні (днів) |
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NTD4815NH-1G | Виробник : ON Semiconductor | Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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NTD4815NH-1G | Виробник : onsemi |
Description: MOSFET N-CH 30V 6.9A/35A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V |
товар відсутній |