Технічний опис NTE109 NTE Electronics, Inc
Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 100V, Load current: 40mA, Semiconductor structure: single diode, Features of semiconductor devices: fast switching; germanium diode (Ge), Capacitance: 0.8pF, Case: DO7, Max. forward voltage: 1V, Max. forward impulse current: 0.5A, Leakage current: 0.1mA, кількість в упаковці: 1 шт.
Інші пропозиції NTE109
| Фото | Назва | Виробник | Інформація |
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NTE109 | Виробник : NTE Electronics |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 40mA Semiconductor structure: single diode Features of semiconductor devices: fast switching; germanium diode (Ge) Capacitance: 0.8pF Case: DO7 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 0.1mA кількість в упаковці: 1 шт |
товар відсутній |
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NTE109 | Виробник : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 40mA Semiconductor structure: single diode Features of semiconductor devices: fast switching; germanium diode (Ge) Capacitance: 0.8pF Case: DO7 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 0.1mA |
товар відсутній |