на замовлення 1500 шт:
термін постачання 343-352 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.7 грн |
| 10+ | 93.2 грн |
| 100+ | 63.04 грн |
| 500+ | 53.41 грн |
| 1000+ | 43.58 грн |
| 1500+ | 40.98 грн |
| 3000+ | 39.06 грн |
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Технічний опис NTMFS0D9N04XMT1G onsemi
Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 20 V.
Інші пропозиції NTMFS0D9N04XMT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTMFS0D9N04XMT1G | Виробник : ON Semiconductor |
 Power MOSFET, Single, N-Channel |
товар відсутній |
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| NTMFS0D9N04XMT1G | Виробник : ON Semiconductor |
Power MOSFET, Single, N-Channel |
товар відсутній |
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NTMFS0D9N04XMT1G | Виробник : onsemi |
Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 20 V |
товар відсутній |
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NTMFS0D9N04XMT1G | Виробник : onsemi |
Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 20 V |
товар відсутній |