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NTTBC070NP10M5L onsemi

nttbc070np10m5l-d.pdf Виробник: onsemi
Description: MOSFET N/P-CH 100V 3.5A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Supplier Device Package: 8-WDFN (3x3)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+68.98 грн
10+ 54.32 грн
100+ 42.25 грн
500+ 33.61 грн
1000+ 27.38 грн
Мінімальне замовлення: 5
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Технічний опис NTTBC070NP10M5L onsemi

Description: MOSFET N/P-CH 100V 3.5A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V, Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA, Supplier Device Package: 8-WDFN (3x3).

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NTTBC070NP10M5L Виробник : onsemi nttbc070np10m5l-d.pdf Description: MOSFET N/P-CH 100V 3.5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Supplier Device Package: 8-WDFN (3x3)
товар відсутній
NTTBC070NP10M5L Виробник : onsemi NTTBC070NP10M5L_D-3150587.pdf MOSFET MV5_100V_N_P_IN DUALS AND SINGLE
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