на замовлення 482 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 197.62 грн |
10+ | 161.95 грн |
100+ | 111.6 грн |
250+ | 102.96 грн |
500+ | 93.66 грн |
1000+ | 80.38 грн |
3000+ | 75.73 грн |
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Технічний опис NTTFS022N15MC onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V, Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V.
Інші пропозиції NTTFS022N15MC
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTTFS022N15MC | Виробник : onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
товар відсутній |
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NTTFS022N15MC | Виробник : onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
товар відсутній |