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NVMFS5A160PLZT1G ON Semiconductor

Name: NVMFS5A160PLZT1G
Brand: onsemi
SKU: 5243350-4
Price: 190.64 UAH
Availability: BackOrder

Виробник: ON Semiconductor
Trans MOSFET P-CH 60V 15A Automotive 5-Pin(4+Tab) SO-FL T/R

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Технічний опис NVMFS5A160PLZT1G ON Semiconductor

Description: MOSFET P-CH 60V 15A/100A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V.

Інші пропозиції NVMFS5A160PLZT1G

Назва	Виробник	Інформація	Доступність
NVMFS5A160PLZT1G	Виробник : ONSEMI	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Mounting: SMD Drain current: 100A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5x6 On-state resistance: 7.7mΩ Power dissipation: 200W Polarisation: unipolar кількість в упаковці: 1500 шт	товар відсутній
NVMFS5A160PLZT1G	Виробник : onsemi	Description: MOSFET P-CH 60V 15A/100A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V	товар відсутній
NVMFS5A160PLZT1G	Виробник : onsemi	Description: MOSFET P-CH 60V 15A/100A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V	товар відсутній
NVMFS5A160PLZT1G	Виробник : onsemi	MOSFET -60V7.7MOHMSINGLE	товар відсутній
NVMFS5A160PLZT1G	Виробник : ONSEMI	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Mounting: SMD Drain current: 100A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5x6 On-state resistance: 7.7mΩ Power dissipation: 200W Polarisation: unipolar	товар відсутній