Технічний опис NXPSC06650XQ Ween
Description: DIODE SIL CARBIDE 650V 6A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 190pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Інші пропозиції NXPSC06650XQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NXPSC06650XQ | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товар відсутній |
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NXPSC06650XQ | Виробник : WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC06650XQ/TO220F-2L |
товар відсутній |