NXV08A170DB2 ON Semiconductor

Description: APM12-CBA, MV7 80V, AL2O3, HALF, Packaging: Tray, Package / Case: 12-PowerDIP Module (1.118", 28.40mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V, Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V, Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: APM12-CBA, Grade: Automotive, Qualification: AEC-Q100.