P6FE25VX5K-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис P6FE25VX5K-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W, Mounting: SMD, Case: FE (TO252AB similar), Kind of package: reel; tape, Application: automotive industry, Polarisation: unipolar, Gate charge: 10nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 24A, Power dissipation: 27W, Drain-source voltage: 250V, Drain current: 6A, On-state resistance: 0.7Ω, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції P6FE25VX5K-5071
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
P6FE25VX5K-5071 | Виробник : Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
товар відсутній |
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P6FE25VX5K-5071 | Виробник : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W Mounting: SMD Case: FE (TO252AB similar) Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Power dissipation: 27W Drain-source voltage: 250V Drain current: 6A On-state resistance: 0.7Ω Type of transistor: N-MOSFET |
товар відсутній |