P8FE10SBK-5071 SHINDENGEN
Виробник: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
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Технічний опис P8FE10SBK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W, Kind of package: reel; tape, Polarisation: unipolar, Case: FE (TO252AB similar), Mounting: SMD, Gate charge: 16.5nC, Technology: EETMOS3, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 24A, Drain current: 8A, On-state resistance: 99mΩ, Type of transistor: N-MOSFET, Drain-source voltage: 100V, Application: automotive industry, Power dissipation: 24W, кількість в упаковці: 1 шт.
Інші пропозиції P8FE10SBK-5071
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| P8FE10SBK-5071 | Виробник : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W |
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