PJMB390N65EC_T0_00601 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
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Технічний опис PJMB390N65EC_T0_00601 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263, Case: TO263, Mounting: SMD, Kind of package: tube, Drain-source voltage: 650V, Drain current: 10A, On-state resistance: 390mΩ, Type of transistor: N-MOSFET, Power dissipation: 87.5W, Polarisation: unipolar, Gate charge: 19nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 22A, кількість в упаковці: 1 шт.
Інші пропозиції PJMB390N65EC_T0_00601
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PJMB390N65EC_T0_00601 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
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