PJMP120N60EC_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
на замовлення 1969 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 441.91 грн |
10+ | 364.65 грн |
100+ | 303.9 грн |
500+ | 251.65 грн |
1000+ | 226.48 грн |
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Технічний опис PJMP120N60EC_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.
Інші пропозиції PJMP120N60EC_T0_00001 за ціною від 242.45 грн до 473.51 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PJMP120N60EC_T0_00001 | Виробник : Panjit | MOSFET 22V,ESD Protection,SOT-23,UNI |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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PJMP120N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PJMP120N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |