PJMP900N60EC_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.44 грн |
| 10+ | 176.58 грн |
| 100+ | 142.86 грн |
| 500+ | 119.17 грн |
| 1000+ | 102.04 грн |
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Технічний опис PJMP900N60EC_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Power Dissipation (Max): 47.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V.
Інші пропозиції PJMP900N60EC_T0_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PJMP900N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Mounting: THT Pulsed drain current: 9.7A Power dissipation: 47.5W Gate charge: 8.8nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220ABL On-state resistance: 0.9Ω кількість в упаковці: 1 шт |
товар відсутній |
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PJMP900N60EC_T0_00001 | Виробник : Panjit |
MOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5 |
товар відсутній |
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| PJMP900N60EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Mounting: THT Pulsed drain current: 9.7A Power dissipation: 47.5W Gate charge: 8.8nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220ABL On-state resistance: 0.9Ω |
товар відсутній |