PJQ5440_R2_00001

PJQ5440_R2_00001 Panjit International Inc.


PJQ5440.pdf Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
на замовлення 2920 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+79.76 грн
10+ 62.76 грн
100+ 48.79 грн
500+ 38.81 грн
1000+ 31.61 грн
Мінімальне замовлення: 4
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Технічний опис PJQ5440_R2_00001 Panjit International Inc.

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 70W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V.

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Ціна без ПДВ
PJQ5440_R2_00001 PJQ5440_R2_00001 Виробник : Panjit International Inc. PJQ5440.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
товар відсутній
PJQ5440_R2_00001 PJQ5440_R2_00001 Виробник : Panjit PJQ5440-1867463.pdf MOSFET 40V N-Channel Enhancement Mode MOSFET
товар відсутній
PJQ5440-R2-00001 PJQ5440-R2-00001 Виробник : Panjit PJQ5440-1867463.pdf MOSFET DFN5060-8L/MOS/DFN/NFET-40FKMN
товар відсутній