PJQ5442-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.8 грн |
| 10+ | 48.92 грн |
| 100+ | 38.06 грн |
| 500+ | 30.28 грн |
| 1000+ | 24.66 грн |
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Технічний опис PJQ5442-AU_R2_000A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJQ5442-AU_R2_000A1
| Фото | Назва | Виробник | Інформація |
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PJQ5442-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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