PJQ5844_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET 2N-CH 40V 10A/45A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
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Технічний опис PJQ5844_R2_00001 Panjit International Inc.
Description: MOSFET 2N-CH 40V 10A/45A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 32W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060B-8.
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PJQ5844_R2_00001 | Виробник : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10A/45A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 |
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