PJS6421_S1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 2367 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.46 грн |
| 13+ | 21.8 грн |
| 100+ | 13.11 грн |
| 500+ | 11.39 грн |
| 1000+ | 7.74 грн |
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Технічний опис PJS6421_S1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V.
Інші пропозиції PJS6421_S1_00001 за ціною від 6.31 грн до 32.47 грн
| Фото | Назва | Виробник | Інформація |
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PJS6421_S1_00001 | Виробник : Panjit |
MOSFET 20V P-Channel Enhancement Mode MOSFET |
на замовлення 12565 шт: термін постачання 21-30 дні (днів) |
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| PJS6421_S1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -29.6A Power dissipation: 2W Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
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PJS6421_S1_00001 | Виробник : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V |
товар відсутній |
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| PJS6421-S1-00001 | Виробник : Panjit |
MOSFET SOT-23 6L-1/MOS/NFET-20TLMP |
товар відсутній |
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| PJS6421_S1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -29.6A Power dissipation: 2W Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |