PJS6601_S2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
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Технічний опис PJS6601_S2_00001 Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Not For New Designs.
Інші пропозиції PJS6601_S2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PJS6601_S2_00001 | Виробник : Panjit |
MOSFET 20V Complementary Enhancement Mode MOSFET |
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PJS6601-S2-00001 | Виробник : Panjit |
MOSFET |
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